BDV64, BDV64a, BDV64b, BDV64c pnp silicon power darlingtons
1 june 1993 - revised september 2002 specifications are subject to change without notice. designed for complementary use with bdv65, bdv65a, bdv65b and bdv65c 125 w at 25c case temperature 12 a continuous collector current minimum h fe of 1000 at 4 v, 5 a absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. this value applies for t p 0.1 ms, duty cycle 10% 2. derate linearly to 150c case temperature at the rate of 0.56 w/c. 3. derate linearly to 150c free air temperature at the rate of 28 mw/c. rating symbol value unit collector-base voltage (i e = 0) BDV64 BDV64a BDV64b BDV64c v cbo -60 -80 -100 -120 v collector-emitter voltage (i b = 0) BDV64 BDV64a BDV64b BDV64c v ceo -60 -80 -100 -120 v emitter-base voltage v ebo -5 v continuous collector current i c -12 a peak collector current (see note 1) i cm -15 a continuous base current i b -0.5 a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 125 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 3.5 w operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 260 c sot-93 package (top view) pin 2 is in electrical contact with the mounting base. mdtraa b c e 1 2 3 obsolete
BDV64, BDV64a, BDV64b, BDV64c pnp silicon power darlingtons 2
june 1993 - revised september 2002 specifications are subject to change without notice. notes: 4. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 5. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = -30 ma i b = 0 (see note 4) BDV64 BDV64a BDV64b BDV64c -60 -80 -100 -120 v i ceo collector-emitter cut-off current v cb = -30 v v cb = -40 v v cb = -50 v v cb = -60 v i b =0 i b =0 i b =0 i b =0 BDV64 BDV64a BDV64b BDV64c -2 -2 -2 -2 ma i cbo collector cut-off current v cb = -60 v v cb = -80 v v cb = -100 v v cb = -120 v v cb = -30 v v cb = -40 v v cb = -50 v v cb = -60 v i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 t c = 150c t c = 150c t c = 150c t c = 150c BDV64 BDV64a BDV64b BDV64c BDV64 BDV64a BDV64b BDV64c -0.4 -0.4 -0.4 -0.4 -2 -2 -2 -2 ma i ebo emitter cut-off current v eb = -5 v i c =0 -5 ma h fe forward current transfer ratio v ce = -4 v i c = -5 a (see notes 4 and 5) 1000 v ce(sat) collector-emitter saturation voltage i b = -20 ma i c = -5 a (see notes 4 and 5) -2 v v be base-emitter voltage v ce = -4 v i c = -5 a (see notes 4 and 5) -2.5 v v ec parallel diode forward voltage i e = -10 a i b = 0 (see notes 4 and 5) -3.5 v thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1c/w r ja junction to free air thermal resistance 35.7 c/w obsolete
BDV64, BDV64a, BDV64b, BDV64c pnp silicon power darlingtons 3
june 1993 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a -05 -20 -10 -10 h fe - typical dc current gain 100 1000 10000 tcs145ad t c = -40c t c = 25c t c = 100c v ce = -4 v t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs collector current i c - collector current - a -05 -20 -10 -10 v ce(sat) - collector-emitter saturation voltage - v -20 -15 -10 -05 0 tcs145ae t c = -40c t c = 25c t c = 100c t p = 300 s, duty cycle < 2% i b = i c / 100 base-emitter saturation voltage vs collector current i c - collector current - a -05 -20 -10 -10 v be(sat) - base-emitter saturation voltage - v -30 -25 -20 -10 -15 -05 0 tcs145af t c = -40c t c = 25c t c = 100c i b = i c / 100 t p = 300 s, duty cycle < 2% obsolete
BDV64, BDV64a, BDV64b, BDV64c pnp silicon power darlingtons 4
june 1993 - revised september 2002 specifications are subject to change without notice. thermal information figure 4. maximum power dissipation vs case temperature t c - case temperature - c 0 25 50 75 100 125 150 p tot - maximum power dissipation - w 0 20 40 60 80 100 120 140 tis140aa obsolete
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